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Autori: Ruxandra M. Costescu, Marcel A. Wall, and David G. Cahill
Editorial: Physical Review B, 67, 2003.
The thermal conductance of interfaces between epitaxial TiN and single crystal oxides is measured at temperatures between 79.4 and 294 K using time-domain thermoreflectance. The analysis method relies on the ratio of the in-phase and out-of-phase signals of the lock-in amplifier for more accurate data analysis. The validity of this approach is tested by measurements on 6.5, 11.8, and 25 nm thick thermally oxidized SiO2 on Si. The thermal conductances G of TiN/MgO(001), TiN/MgO(111), and TiN/Al2O3(0001) interfaces are essentially identical and in good agreement with the predictions of lattice dynamics models and the diffuse mismatch model with a four-atom fcc unit cell. Near room temperature, G=700 MW m-2K -1, ~5 times larger than the highest values reported previously for any individual interface.
Cuvinte cheie: thermal conductance, epitaxial interfaces, TiN, single crystal oxide substrates, MgO, Al2O3, thin SiO2 test, picosecond time-domain thermoreflectance, lattice dynamics model, diffuse mismatch model