Inscriere cercetatori

Perioada scursă de la depunerea aplicațiilor

Proiecte de cercetare postdoctorala (PD)

Proiecte complexe de cercetare de frontiera (PCCF)

Site nou !

Daca nu va puteti recupera parola (sau aveti alte probleme), scrieti-ne la pagina de contact. Situl vechi se gaseste la adresa


SnO2 Gas Sensors

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: A. Dima, O. Dima, et al

Editorial: Thin Solid Films, 427, p.427, 2003.


Columnar porous silicon (CPS) substrate SnO2 gas-sensor devices with high sensitivities and low working temperatures (input power 500-800 mW in TO-99 casing) are presented. The paper compares a conventional substrate (SnO2 on SiO2/silicon substrate) with two porous substrate devices, one with pores of 60-300 nm (‘porous’), and the other of 400-2000 nm (‘mesoporous’). The CPS substrates were prepared on <1 0 0> p-type 3 inch silicon wafers through boron diffusion and anodisation. The SnO2 was prepared through sol-gel deposition from Tin II Ethylhexanoate precursors and was deposited through spin-coating. The W/Au inter-fingered contact structure was deposited over the SnO2 layers for the ‘porous’ and ‘mesoporous’ devices. The SnO2 layers were vitrified layer-by-layer at 400 °C and at the end annealed at 500 °C. The results indicate a mid-range working temperature range (250 °C) for the ‘porous’ substrate device, with good response times and high sensitivity, relative to the SnO2/silicon substrate device. The ‘mesoporous’ substrate device has yet higher sensitivity, however, it is considerably slower (typically 320 s OFF-times for O2 in synthetic air).

Cuvinte cheie: Response times of integrated SnO2 gas sensors