Scopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
Autori: M. Gherasimova, J. Su, G. Cui, Z.-Y. Ren, S.-R. Jeon, J. Han, Y. He, Y.-K. Song, A. V. Nurmikko, D. Ciuparu, L. Pfefferle
Editorial: Physica Status Solidi (c), 2(7), p.2361-2364, 2005.
Zero-dimensional (quantum dot) and one-dimensional (nanowire) III-nitride structures are fabricated by metalorganic chemical vapor deposition by introducing metallic nanoclusters at the initial stages of the synthesis. GaN quantum dots are obtained by nitridation of liquid Ga clusters of controlled size and density, while nanowires are produced in the presence of metallic liquid phase catalysing the selective vaporliquid-solid nucleation under the condition of low supersaturation in the growth environment. Nanostructures are characterized with atomic force microscopy, scanning electron microscopy, and photoluminescence.
Optically active GaN quantum dots are obtained after annealing in nitrogen-rich environment.
Cuvinte cheie: nanostructures, quantum dots, gallium nitride