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Comparative study of magnetism and interface composition in Fe/GaAs(100) and Fe/InAs(100)

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: C. M. Teodorescu, D. Luca

Editorial: Surface Science, 600, p.4200-4204, 2006.


Thin layers of Fe are deposited at 100ºC on GaAs(100) and InAs(100) substrates by molecu¬lar beam epitaxy. These structures are characterized by photoelectron spectroscopy (PES), in order to derive their chemical composition and interface reactivity, and by X-ray magnetic circular dichroism (XMCD) recorded at room temperature in remanence mode, in order to derive the atomic magnetic moment of Fe. As previously reported, Fe/GaAs(100) exhibits a strong and complicated interface reactivity, with considerable intermixing of Fe with Ga and As. Unlike the above structure, Fe/InAs(100) exhibits a much lower interface reactivity, whereas the Fe magnetic moment increase is much more pronounced as function of Fe thick¬ness. The total atomic ferromagnetic moment reaches at room temperature 2.0 Bohr magne¬tons by about 1 nm Fe effective thickness, which is almost the Fe bcc bulk value (2.2 Bohr). The novelty of the present study is a direct comparison of the two interfaces prepared and measured in the same experimental arrangements.

Cuvinte cheie: metal-semiconductor magnetic thin film structures, iron, gallium arsenide, indium arsenide, photoelectron spectroscopy, X-ray magnetic circular dichroism