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The dependence of the photomagnetoelectric effect upon the impurity distribution of the diffused junctions. Abrupt junctions

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: E. LAKATOŞ

Editorial: IEEE International Semiconductor Conference (CAS?96), 19, p.595-598, 1996.

Rezumat:

This paper describes the dependence of the photomagnetoelectric effect upon the impurity distributions of the abrupt diffused junctions, in constant conditions of the applied magnetic field and luminous radiation. The calculated photomagnetic voltages depending on surface concentration and substrate impurity concentrations are exhibit.

Cuvinte cheie: photomagnetoelectric effect, abrupt diffused junctions, photomagnetic voltage