Scopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
Autori: D. Moraru, D. Nagata, K. Yokoi, K. Ebisawa, and M. Tabe
Editorial: Proceedings of IEEE 2008 Silicon Nanoelectronics Workshop, p.M1135, 2008.
As field-effect transistor (FET) dimensions are scaled down, discreteness of dopant distribution in the device channel strongly affects its electrical behavior. Ionized dopants introduce potential fluctuations in the Si channel, working basically as quantum dots (QDs) with only two states available: depleted or filled by a single elementary charge. Hence, few-dopant systems are attractive for single-charge transfer controlled in time and space.
In this work, we discuss the possibility of controlling the electron conduction path in silicon-on-insulator (SOI)-FETs with doped nanowire channel with single-dopant accuracy. We show that top gate and back gate can be used in combination to introduce/remove individual dopants in/from the conduction path. This capability allows the optimization of the potential profile, with promising features for single-electron transfer operation.
Cuvinte cheie: single-electron transfer, single dopant, Coulomb blockade, QD array