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Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: *M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe

Editorial: Applied Physics Letters, 93, p.142101, 2008.


Detection of individual dopants in the thin silicon layer using Kelvin Probe Force Microscopy is
presented. The analysis of the surface potential images taken at low temperatures (13 K) on n-type
and p-type samples reveals local potential fluctuations that can be attributed to single phosphorus
and boron atoms, respectively. Results are confirmed by simulation of surface potential induced by
dopants and by the back gate voltage dependence of the measured potential.

Cuvinte cheie: individual dopants, low-temperature KFM, potential profile