Inscriere cercetatori

Site nou !

Daca nu va puteti recupera parola (sau aveti alte probleme), scrieti-ne la pagina de contact. Situl vechi se gaseste la adresa


Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: M. Brezeanu, T. Butler, N.L. Rupesinghe, G.A.J. Amaratunga, S.J. Rashid, F. Udrea, M. Avram, G. Brezeanu

Editorial: Diamond and Related Materials, Volume 16, Issues 4-7, p.1020-1024 , 2007.


The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure.

Cuvinte cheie: Electronic device structures, High power electronics, Schottky diodes