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Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: M. Brezeanu, T. Butler, N.L. Rupesinghe, G.A.J. Amaratunga, S.J. Rashid, F. Udrea, M. Avram, G. Brezeanu

Editorial: Diamond and Related Materials, Volume 16, Issues 4-7, p.1020-1024 , 2007.

Rezumat:

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure.

Cuvinte cheie: Electronic device structures, High power electronics, Schottky diodes

URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TWV-4MXBF96-1&_user=10&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=3b7c6ea683a4b61a11ef7986ec7c98e1