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Study of localization processes in transport properties of Bi:2201 epitaxial thin film

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: 6. D. MARCONI,*, I. MATEI, S. MANOLACHE, C. LUNG, A. V. POP

Editorial: Journal of Optoelectronics and Advanced Materials , 10, p.926 –, 2008.

Rezumat:

Epitaxial Bi:2201 thin films were deposited on SrTiO3 (100) substrate using the DC magnetron sputtering method. Optimal deposition conditions for superconducting films with smooth film surface and high epitaxial quality were obtained. The effect of partial oxygen pressure (fO2) in sputtering gas on the electrical resistivity was studied. The phase diagram for transition temperature and localization temperature function of oxygen partial pressure was obtained.

Cuvinte cheie: optoelectronica si materiale avansate // optoelectronics and new advanced materials

URL: http://inoe.inoe.ro/joam/index.php?option=magazine&op=view&idu=1331&catid=25