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Single-electron transport through individual dopants in a dopant-rich environment

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: *M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno

Editorial: Physical Review Letters, 105, p.016803, 2010.

Rezumat:

We show that single-electron transport through a single dopant can be achieved even in random background of many-dopants without any precise placement of individual dopants. First, we observe potential maps of phosphorus-doped channel by low-temperature Kelvin probe force microscope and demonstrate potential change due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs. gate voltage characteristics in scaled-down doped-channel field-effect transistors.

Cuvinte cheie: single-electron tunneling, dopant, silicon, nano-FET

URL: http://prl.aps.org/abstract/PRL/v105/i1/e016803