Scopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã
Autori: *M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno
Editorial: Physical Review Letters, 105, p.016803, 2010.
Rezumat:
We show that single-electron transport through a single dopant can be achieved even in random background of many-dopants without any precise placement of individual dopants. First, we observe potential maps of phosphorus-doped channel by low-temperature Kelvin probe force microscope and demonstrate potential change due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs. gate voltage characteristics in scaled-down doped-channel field-effect transistors.
Cuvinte cheie: single-electron tunneling, dopant, silicon, nano-FET