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Autori: D. Moraru, R. Nakamura, S. Miki, T. Mizuno, and M. Tabe
Editorial: Proceedings of IEEE Silicon Nanoelectronics Workshop, p.39, 2010.
As device dimensions are continuously scaled down, the discreteness of dopant distribution has a significant effect on conventional device operation and controllability. However, a new device concept emerged: a single dopant transistor.
Recent reports have demonstrated the characteristics of single-electron transport through a single or a few isolated dopant(s) in an FET channel. It is, however, difficult to control the number and position of single dopants in nanoscale. Here, we show that the structure of dopant-induced quantum dot array can be controlled in FETs containing a large number of dopants by the channel geometry.
Cuvinte cheie: single dopant, silicon, quantum dot, channel geometry