Inscriere cercetatori

Site nou !

Daca nu va puteti recupera parola (sau aveti alte probleme), scrieti-ne la pagina de contact. Situl vechi se gaseste la adresa


Control of dopant-induced quantum dots by channel geometry

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: D. Moraru, R. Nakamura, S. Miki, T. Mizuno, and M. Tabe

Editorial: Proceedings of IEEE Silicon Nanoelectronics Workshop, p.39, 2010.


As device dimensions are continuously scaled down, the discreteness of dopant distribution has a significant effect on conventional device operation and controllability. However, a new device concept emerged: a single dopant transistor.
Recent reports have demonstrated the characteristics of single-electron transport through a single or a few isolated dopant(s) in an FET channel. It is, however, difficult to control the number and position of single dopants in nanoscale. Here, we show that the structure of dopant-induced quantum dot array can be controlled in FETs containing a large number of dopants by the channel geometry.

Cuvinte cheie: single dopant, silicon, quantum dot, channel geometry