Autori: *K. Yokoi, D. Moraru, T. Mizuno, and M. Tabe

Editorial: Journal of Applied Physics, 108, p.053710, 2010.

Rezumat:

We have studied single-electron turnstile operation in common-gated one-dimensional arrays of four tunnel junctions (three dots) having inhomogeneous junction capacitances. Analytical calculations show that the source-drain voltage range with a current plateau due to single-electron turnstile operation is increased when the outer two tunnel capacitances are adjusted to be smaller than the inner ones. In fact, we have demonstrated in phosphorous-doped silicon-on-insulator field-effect transistors (SOI-FETs) that back-gate voltage works to assist the turnstile operation, which is primarily ascribed to electrical control of junction capacitance dispersion, i.e., reduction of outer junction capacitances. As a result, post-fabrication control of capacitance dispersion in multi-junction FETs can be achieved, resulting in successful turnstile operation.

Cuvinte cheie: single-electron turnstile, discrete dopants, tuning, Coulomb Blockade

URL: http://jap.aip.org/resource/1/japiau/v108/i5/p053710_s1?isAuthorized=no