Scopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
Autori: D. Moraru, K. Yokoi, R. Nakamura, T. Mizuno, M. Tabe
Editorial: Trans Tech Publications, Key Engineering Materials, 470, p.27-32, 2011.
An individual dopant atom may become the active unit of future electronic devices by mediating single-electron transport in nanoscale field-effect transistors. Single dopants can be
accessed electrically even in a dopant-rich environment, offering the opportunity to develop applications based on arrays of dopants. Here, we focus on single-electron turnstile operation in arrays of dopant-induced quantum dots realized in highly-doped nanoscale transistors. We show that
dopant-based single-electron turnstile can be achieved and tuned with a combination of two gates and we indicate guidelines for further optimization.
Cuvinte cheie: single-electron turnstile, discrete dopants, SOI-FET