Inscriere cercetatori

Site nou !

Daca nu va puteti recupera parola (sau aveti alte probleme), scrieti-ne la pagina de contact. Situl vechi se gaseste la adresa old.ad-astra.ro

Facebook

Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: D. Moraru, K. Yokoi, R. Nakamura, T. Mizuno, M. Tabe

Editorial: Trans Tech Publications, Key Engineering Materials, 470, p.27-32, 2011.

Rezumat:

An individual dopant atom may become the active unit of future electronic devices by mediating single-electron transport in nanoscale field-effect transistors. Single dopants can be
accessed electrically even in a dopant-rich environment, offering the opportunity to develop applications based on arrays of dopants. Here, we focus on single-electron turnstile operation in arrays of dopant-induced quantum dots realized in highly-doped nanoscale transistors. We show that
dopant-based single-electron turnstile can be achieved and tuned with a combination of two gates and we indicate guidelines for further optimization.

Cuvinte cheie: single-electron turnstile, discrete dopants, SOI-FET

URL: http://www.scientific.net/KEM.470.27