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Unified model for p-n junction current-voltage characteristics

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: Miron J. Cristea

Editorial: Versita, Springer, Central European Journal of Engineering, 1(1), p.113-116, 2011.


Current-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.

Cuvinte cheie: P-N junctions, Current-voltage characteristics, Low injection, High injection level, Parameter extraction