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Si-based single-dopant atom devices

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: M. Tabe, D. Moraru, A. Udhiarto, S. Miki, M. Anwar, Y. Kawai, and T. Mizuno

Editorial: Advanced Materials Research, 222, p.205-208, 2011.

Rezumat:

We have recently proposed and demonstrated a new device concept, “Si-based single-dopant atom device”, consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.

Cuvinte cheie: silicon, single dopant, single-electron devices

URL: http://www.scientific.net/AMR.222.205