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Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: A. Udhiarto, D. Moraru, T. Mizuno, and M. Tabe

Editorial: Applied Physics Letters, 99, p.113108, 2011.


We study interaction of single-electron current and incident photons in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors. Trapping events of a photoexcited-electron by a trap donor are observed as random telegraph signals in single-electron-tunneling current flowing through a current-path donor. Trapping causes a potential change at the current-path donor, inducing a current change. An opposite current change is caused by electron detrapping from the trap donor to the current-path donor. This indicates that only a few donors (two donors in this study) work in the interaction between single-electron transport and photoexcited-electron trapping, even in the presence of many donors.

Cuvinte cheie: single donor, photon-generated electron, random telegraph signal, SOI-FET