Autori: G. Socol, A. C. Galca, C.R. Luculescu, A. Stanculescu, M. Socol, N. Stefan, E. Axente, L. Duta, C.M. Mihailescu, V. Craciun, D. Craciun, V. Sava, I.N. Mihailescu
Editorial: Digest Journal of Nanomaterials and Biostructures, 6 (1), p.107-115, 2011.
Indium Zinc Oxide compositional libraries were fabricated by combinatorial pulsed laser deposition technique on glass substrate at room temperature. Two pairs of targets with In atomic concentrations, In/(In+Zn), of 28 at.% and 56 at.% or 42 at.% and 70 at.% were employed. A high transparency was observed for all the coatings with transmittance values better than 95%. The maximum thicknesses of the samples, inferred by spectroscopic ellipsometry, were within the 174-310 nm range for the simple PLD films, whereas in case of combinatorial PLD coatings were 341 or 467 nm. Energy dispersive X-ray spectroscopy revealed that In content in the combinatorial films was in the 27-52 at. % range. From atomic force microscopy histograms we evidenced a decrease of the RMS roughness down to 1 nm with the increase of the In content. As a result of the compositional library studies two minimum values of the electrical resistivity were identified at 2.3×10-3 Ω·cm and 8.6 ×10-4 Ω·cm, which correspond to 28.8-29.5 at.% and 44-49 at% range of Indium content.
Cuvinte cheie: Transparent conductive oxide, Pulsed laser deposition, Indium zinc oxide, Thin films, Combinatorial, Compositional libraries