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Local structure in the oxygen ion implanted PbS photoconductor thin films by EXAFS spectroscopy

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: Emil lndrea , Michel Jaouen

Editorial: ELSEVIER, Applied Surface Science, 106, p.513-516, 1996.


X-ray absorption fine structure measurements were performed at the Pb L m edge on the oxygen implanted PbS
semiconductor thin films in order to probe structural changes in such films. It has been found that the Pb-S bond length was changed from 2.98 A, to 2.82 ,~. The nearest neighbor shell of Pb consists of 5.4 S atoms and 0.60 atoms. The increased values of the Debye-Waller factors indicate the presence of a structural disorder induced by the doping process. We fonnd that a substitution of the sulphur atoms by oxygen at the sulphur sites occurs by oxygen ions implantation of the PbS
semiconductor thin films.

Cuvinte cheie: Stiinta suprafetelor , spectroscopie EXAFS // Surface science , spectroscopie EXAFS