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Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: M. Anwar, R. Nowak, D. Moraru, A. Udhiarto, T. Mizuno, R. Jablonski, and M. Tabe

Editorial: Applied Physics Letters, 99 (21), p.213101-1-3, 2011.

Rezumat:

We have comparatively studied the effects of electron injection in individual phosphorus-donor potential wells at 13 K and 300 K by Kelvin probe force microscopy in silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. As a result, at 13 K, localized single-electron filling into the phosphorus-donor potential well is found, reflecting single-electron tunneling transport through individual donors, whereas at 300 K, spatially extended and continuous electron filling over a number of phosphorus-donors is observed, reflecting drift-diffusion transport.

Cuvinte cheie: KFM, single donor atom, electron injection

URL: http://scitation.aip.org/content/aip/journal/apl/99/21/10.1063/1.3663624