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Autori: R. Draşovean, S. Condurache-Bota
Editorial: Revue Roumaine de Chimie, 54(10), p.827-831, 2009.
The influence of thermal treatment (different annealing atmospheres) on the electrical properties of cobalt oxide thin layers was studied. The layers were fabricated by sol-gel technique. Electrical properties were determined by the four–point probe method and Van der Pauw technique. The film resistivity decreases with temperature which confirms the semiconductor nature of the film. For the same film thickness value, the layers exposed in air exhibit conductivity values of order 10(-3) Ω(-1)(cm-1), while for the layers treated in forming gas (H2/N2) the conductivity is 10(6) times greater.
The activation energy decreases with increase in film thickness.
Cuvinte cheie: cobalt oxide, thin films, sol-gel, electrical analysis