TCAD software needs equipment input settings and models to create the process enviromment for process and device simulation tools like TSUPREM4 and MEDICI. After optimization the next step is the circuit simulation and design using software packages like SPICE. First using design of experiments-DOE and response surface modelling-RSM technique we optimise the MOSFET characteristics and then we compare the transfer characteristics of n-type MOSFET,

Industry-standard TCAD software packages are widely usec by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using SPICE. This paper focuses on the matching of these program packages in the area of parameter and characteristics extraction. We compared the transfer characteristics of n-type MOSFET, biased in the linear region,

This paper describes the dependence of the photomagnetoelectric effect upon the impurity distributions of the abrupt diffused junctions, in constant conditions of the applied magnetic field and luminous radiation. The calculated photomagnetic voltages depending on surface concentration and substrate impurity concentrations are exhibit.

ITO/n-Si heterojunctions have been obtained by sol-gel and pyrolysis ITO depositions. The used silicon wafers were obtained out of silicon tubes. Spectral quantum efficiency and I-V characteristics have been studied on both ITO/n-Si and p-n junctions. On ITO/n-Si heterojunctions, a large blue-light response was found.

The difference between the recombination velocities on both surface of the structure determines a different photomagnetoelectric voltage depending on the illuminated surface under constant illumination and applied magnetic field. (VOCFront = n?VOCBack, n = sd/s0).

An experimental study of the photoelectromagnetic effect in p+-v-p+ structures is presented. It is shown that in such structures the photoelectromagnetic effect is at least two orders of magnitude higher than in the case of the semiconductor crystals with the same geometrical size but having ohmic contacts. A model for the operation of these devices is presented and shown to be in qualitative agreement with the experimental data.