Atomic layer deposition and magnetron sputter deposition were used to synthesize thin-film multilayers of W/Al2O3. With individual layers only a few nanometers thick, the high interface density produced a strong impediment to heat transfer, giving rise to a thermal conductivity of 0.6 watts per meter per kelvin. This result suggests that high densities of interfaces between dissimilar materials may provide a route for the production of thermal barriers

The thermal conductance of interfaces between epitaxial TiN and single crystal oxides is measured at temperatures between 79.4 and 294 K using time-domain thermoreflectance. The analysis method relies on the ratio of the in-phase and out-of-phase signals of the lock-in amplifier for more accurate data analysis. The validity of this approach is tested by measurements on 6.5, 11.8, and 25 nm thick thermally oxidized SiO2 on Si. The thermal conductances

Thermal conductivities of hydrogen-silsesquioxane thin films -- Dow Corning "flowable oxide" and nanoporous "extra-low-k" spin-on dielectrics -- are measured in the temperature range 80-400 K using the 3-omega method. Film thickness and atomic densities are characterized by the combination of Rutherford-backscattering spectrometry and variable-angle spectroscopic ellipsometry. Measurements of the longitudinal speeds of sound by picosecond ultrasonics