Daniel Moraru

Research Institute of Electronics, Shizuoka University, Hamamatsu, .

E-mail: trimite un mesaj.

Pagina web a instituţiei: http://www.rie.shizuoka.ac.jp/english/index.html
Pagina web personala: http://www.rie.shizuoka.ac.jp/~nanohome/english/index.html

Nascut(a) in: 1978

Interese: silicon/silicon oxide tunneling structures, single-electron transistors, single-electron transfer

Details:
- coherent electron tunneling through ultrathin silicon oxide films: demonstration of transverse momentum conservation
- single-electron transfer operation in Si nanoscale FETs by utilizing natural dopant-induced potential fluctuations
- single-electron tunneling via dopant atoms

Publicații selectate:

* D. Moraru, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe, Transport spectroscopy of interacting donors in silicon nano-transistors, Scientific Reports, 4, 2014.

* L. T. Anh, D. Moraru, M. Manoharan, M. Tabe, and H. Mizuta, The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures, Journal of Applied Physics, 116, 2014.

* D. Moraru, S. Purwiyanti, R. Nowak, T. Mizuno, A. Udhiarto, D. Hartanto, R. Jablonski, and M. Tabe, Individuality of dopants in silicon nano-pn junctions, Materials Research (Medziagotyra), 20 (2), 2014.

* R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy, Thin Solid Films, 557, 2014.

* S. Purwiyanti, R. Nowak, D. Moraru, T. Mizuno, D. Hartanto, R. Jablonski, and M. Tabe, Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes, Applied Physics Letters, 103 (24), 2013.

* M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta, Dopant-atom-based tunnel SOI-MOSFETs, ECS Transactions, 58, 2013.

* D. Moraru, E. Hamid, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M. Tabe, Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs, Transactions of the Materials Research Society of Japan, 38 (2), 2013.

* R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope, Applied Physics Letters, 102, 2013.

* E. Hamid, D. Moraru, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M. Tabe, Electron-tunneling operation of single-donor-atom transistors at elevated temperatures, Physical Review B, 87 (8), 2013.

* A. Udhiarto, D. Moraru, S. Purwiyanti, Y. Kuzuya, T. Mizuno, H. Mizuta, and M. Tabe, Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions, Applied Physics Express, 5, 2012.

* M. Anwar, R. Nowak, D. Moraru, A. Udhiarto, T. Mizuno, R. Jablonski, and M. Tabe, Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy, Applied Physics Letters, 99 (21), 2011.

* A. Udhiarto, D. Moraru, T. Mizuno, and M. Tabe, Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors, Applied Physics Letters, 99, 2011.

* D. Moraru, A. Udhiarto, M. Anwar, R. Nowak, R. Jablonski, E. Hamid, J. C. Tardio, T. Mizuno, and M. Tabe, Atom devices based on single dopants in silicon nanostructures, Springer Open, Nanoscale Research Letters, 6, 2011.

* M. Anwar, Y. Kawai, D. Moraru, R. Nowak, R. Jablonski, T. Mizuno, and M. Tabe, Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope, Japanese Journal of Applied Physics (Special Issue: Scanning Probe Microscopy), 50, 2011.

* M. Tabe, D. Moraru, A. Udhiarto, S. Miki, M. Anwar, Y. Kawai, and T. Mizuno, Si-based single-dopant atom devices, Advanced Materials Research, 222, 2011.

* D. Moraru, E. Hamid, J. C. Tarido, S. Miki, T. Mizuno, and M. Tabe, Memory effects based on dopant atoms in nano-FETs, Advanced Materials Research, 222, 2011.

* *E. Hamid, D. Moraru, J. C. Tarido, S. Miki, T. Mizuno and M. Tabe, Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors, Applied Physics Letters, 97 (26), 2010.

* *M. Tabe, A. Udhiarto, D. Moraru and T. Mizuno, Single-photon detection by Si single-electron FETs, Physica Status Solidi A (on the cover), 208 (3), 2011.

* D. Moraru, K. Yokoi, R. Nakamura, T. Mizuno, M. Tabe, Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs, Trans Tech Publications, Key Engineering Materials, 470, 2011.

* M. Anwar, Y. Kawai, D. Moraru, T. Mizuno, M. Tabe, KFM observation of electron charging and discharging in phosphorus-doped SOI channel, Trans Tech Publications, Key Engineering Materials, 470, 2011.

* *K. Yokoi, D. Moraru, T. Mizuno, and M. Tabe, Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays, Journal of Applied Physics, 108, 2010.

* E. Hamid, J. C. Tarido, S. Miki, T. Mizuno, D. Moraru, and M. Tabe, Single-dopant memory effect in P-doped Si SOI-MOSFETs, Proceedings of IEEE Silicon Nanoelectronics Workshop, 2010.

* D. Moraru, R. Nakamura, S. Miki, T. Mizuno, and M. Tabe, Control of dopant-induced quantum dots by channel geometry, Proceedings of IEEE Silicon Nanoelectronics Workshop, 2010.

* M. Tabe, D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, and T. Mizuno, Breakthrough of advanced nano-silicon devices, Indonesian Nanoletter, 3, 2010.

* D. Moraru, M. Anwar, M. Ligowski, S. Miki, R. Nakamura, T. Mizuno, and M. Tabe, Single-electron transport through discrete dopants, Extended Abstracts of 2009 Solid State Devices and Materials Conference, 2009.

* *M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno, Single-electron transport through individual dopants in a dopant-rich environment, Physical Review Letters, 105, 2010.

* D. Moraru, M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, and M. Tabe, Single-electron transport characteristics in quantum dot arrays due to ionized dopants, Journal of Automation, Mobile Robotics & Intelligent Systems, 3 (4), 2009.

* M. Ligowski, D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, and R. Jablonski, Detection of individual dopants in single-electron devices - a study by KFM observation and simulation, Journal of Automation, Mobile Robotics & Intelligent Systems, 3 (4), 2009.

* *M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno, Observation of discrete dopant potential and its application to Si single-electron devices, Thin Solid Films, 518, 2010.

* *D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe, Single-electron transfer by inter-dopant coupling tuning in doped nanowire silicon-on-insulator field-effect transistors, Applied Physics Express, 2 (7), 2009.

* M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski, and T. Mizuno, Si single-electron SOI MOSFETs: Interplay with individual dopants and photons, Materials Research Society Symposium Proceedings, 1145, 2009.

* *K. Yokoi, D. Moraru, M. Ligowski, and M. Tabe, Single-gated single-electron transfer in nonuniform arrays of quantum dots, Japanese Journal of Applied Physics, 48, 2009.

* *M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe, Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope, Applied Physics Letters, 93, 2008.

* M. Ligowski, M. Anwar, D. Moraru, R. Jablonski, and M. Tabe, Dopant freeze-out and potential fluctuations observed by low-temperature Kelvin Probe Force Microscope, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008.

* D. Moraru, K. Yokoi, M. Ligowski, and M. Tabe, Single-electron transfer by controlling the dopant-induced quantum dot landscape, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 2008.

* D. Moraru, D. Nagata, K. Yokoi, K. Ebisawa, and M. Tabe, Control of single dopants in the electron conduction path, Proceedings of IEEE 2008 Silicon Nanoelectronics Workshop, 2008.

* M. Tabe, R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi, and H. Ikeda, Manipulation of single-electrons in Si nanodevices - interplay with photons and ions, Springer, R. Jablonski, M. Turkowski, Recent Advances in Mechatronics, 2007.

* M. Tabe, R. Nuryadi, D. Moraru, Z. A. Burhanudin, K. Yokoi, and H. Ikeda, Si multidot FETs for single-electron transfer and single-photon detection, Acta Physica Polonica A, 132 (3), 2008.

* D. Moraru, K. Yokoi, H. Ikeda, and M. Tabe, Design control of random dopant-induced multiple-tunnel-junction arrays, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 2007.

* D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, and M. Tabe, Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays, Procedings of 2007 Silicon Nanoelectronics Workshop, 2007.

* D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda and M. Tabe, Observation of single-electron pump operation with one ac gate bias in phosphorus-doped Si wires, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 2006.

* D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda and M. Tabe, Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005.

* *D. Moraru, Y. Ono, H. Inokawa, and M. Tabe, Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires, Physical Review B, 76, 2007.

* *D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, and M. Tabe, Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures, Japanese Journal of Applied Physics, 45, 2006.