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MOSFET process optimization and characteristics extraction

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: F. BABARADA, E. LAKATOŞ, M. D. PROFIRESCU, C. AMZA, E. MANEA

Editorial: IEEE International Semiconductor Conference (CAS 2004), 27, p.319-322, 2004.

Rezumat:

TCAD software needs equipment input settings and models to create the process enviromment for process and device simulation tools like TSUPREM4 and MEDICI. After optimization the next step is the circuit simulation and design using software packages like SPICE. First using design of experiments-DOE and response surface modelling-RSM technique we optimise the MOSFET characteristics and then we compare the transfer characteristics of n-type MOSFET, biased in the linear region, and obtained from package respectively TSUPREM4 and MEDICI with transfer characteristics from PSPICE. Using the PSPICE second level model for MOS transistor we obtain a good fit with MEDICI transfer characteristics.

Cuvinte cheie: Modelling, Simulation, Optimization, Design