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MOSFET simulation TCAD tools/packages

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: I. CÂMPIAN, O. G. PROFIRESCU, A. UNGUREANU, F. BABARADA, E. LAKATOŞ, C. AMZA

Editorial: IEEE International Semiconductor Conference (CAS 2003), 26, p.235-238, 2003.

Rezumat:

Industry-standard TCAD software packages are widely usec by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using SPICE. This paper focuses on the matching of these program packages in the area of parameter and characteristics extraction. We compared the transfer characteristics of n-type MOSFET, biased in the linear region, obtained from Synopsys package including TSUPREM4 and MEDICI with transfer characteristics from PSPICE package.

Cuvinte cheie: Simulation, Parameter extraction, SPICE