Scopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
Autori: M. Ligowski, M. Anwar, D. Moraru, R. Jablonski, and M. Tabe
Editorial: Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, p.1084-1085, 2008.
Single Electron Devices (SEDs) are very promising for fabrication of future Ultra-Large Scale Integrated (ULSI) circuits, sensors, memories or metrological tools due to their ultimate properties of manipulating elementary charge. The possibility of significant reduction of parameters such as device size or power consumption makes SEDs being widely investigated at present. One of the approaches to achieve single electron transfer is by creating quantum dot (QD) arrays in the Si nanowire utilizing natural potential fluctuations caused by ionized dopant atoms1. Thus it is crucial to monitor the potential distribution inside doped nanowires.
So far, none of the proposed methods are capable of “looking” beyond several topmost layers. Low Temperature Kelvin Probe Force Microscope (LT-KFM) seems to be an appropriate tool for this purpose due to its high sensitivity to charges placed deeper in the device structure. Therefore we believe that KFM may be utilized to sensitively detect dopant induced potential fluctuations and for that goal we have investigated the surface potential of MOSFETs in the wide range of temperatures. We found direct evidence of the dopant freeze-out in nanodevice channel. Moreover we present the observation of potential fluctuations which may appear due to discrete distribution of dopants in the channel.
Cuvinte cheie: Kelvin Probe Force Microscope (KFM), dopant potential, silicon