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Thermal and Electrical Characterization of Silicon Photomultiplier

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: M. Petasecca, B. Alpat, G. Ambrosi, P. Azzarello, R. Battiston, M. Ionica, A. Papi, G. U. Pignatel, S. Haino

Editorial: IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 3, p.1686-1690, 2008.


Detection of low levels of light is one of the key aspects in medical and space applications. Silicon photomultiplier,a novel type of avalanche photodetector which operates in Geiger mode, shows promising results and offer superior design options.The performance characteristics of the SiPM realized in FBK-irst are studied and presented in this paper. The leakage current, dark rate and internal gain are characterized as a function of temperature. The investigation has been carried out in the framework of the DASiPM Collaboration and the INFN/FBK-irst MEMS project.

Cuvinte cheie: photodiode, silicon photomultiplier, thermal characteristics