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KFM observation of electron charging and discharging in phosphorus-doped SOI channel

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: M. Anwar, Y. Kawai, D. Moraru, T. Mizuno, M. Tabe

Editorial: Trans Tech Publications, Key Engineering Materials, 470, p.33-38, 2011.

Rezumat:

Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an electric field. This capability is demonstrated for silicon-on-insulator field-effect-transistors (SOI-FETs) with a phosphorus-doped channel. We show
results of the detection of individual dopants in Si by LT-KFM. Furthermore, we also observe single-electron charging in individual dopants located in the Si channel region.

Cuvinte cheie: Kelvin probe force microscopy, dopant, SOI-FET

URL: http://www.scientific.net/KEM.470.33