Majority carrier concentration and quasi-fermi level for Pb1-xSnxTe DH diode lasers
The paper treats majority carrier concentration and quasi-fermi level in Pb1-xSnxTe DH diode lasers, used for infrared radiation generation.
Read moreScopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
The paper treats majority carrier concentration and quasi-fermi level in Pb1-xSnxTe DH diode lasers, used for infrared radiation generation.
Read moreThe paper show the conditions for the localized states to form in an itinerant antiferomagnet.
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