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Autori: M. Anwar, R. Nowak, D. Moraru, A. Udhiarto, T. Mizuno, R. Jablonski, and M. Tabe
Editorial: Applied Physics Letters, 99 (21), p.213101-1-3, 2011.
Rezumat:
We have comparatively studied the effects of electron injection in individual phosphorus-donor potential wells at 13 K and 300 K by Kelvin probe force microscopy in silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. As a result, at 13 K, localized single-electron filling into the phosphorus-donor potential well is found, reflecting single-electron tunneling transport through individual donors, whereas at 300 K, spatially extended and continuous electron filling over a number of phosphorus-donors is observed, reflecting drift-diffusion transport.
Cuvinte cheie: KFM, single donor atom, electron injection
URL: http://scitation.aip.org/content/aip/journal/apl/99/21/10.1063/1.3663624