doina craciun

institutul national pentru fizica laserilor plasmei si radiatiei, bucuresti, .

E-mail: trimite un mesaj.

Nascut(a) in: 1955

Interese: stiinta materialelor, fiolme subtiri, depuneri laser

Detalii:
Experienta in:
1.generarea si caracterizarea plasmei laser
2.sinteza laser autoaliniata a siliciurilor metalelor refractare
3.depuneri laser de filme subtiri de oxizi si nitruri prin ablatie laser directa si reactiva
4.fotoprocesarea filmelor subtiri
5.caracterizarea optica, electrica, morfologica si structurala a filmelor subtirielipsometrie spectroscopica la unghiuri variabile, difractie a radiatiei x la incidenta razanta si in geometrie simetrica,reflexie a radiatiei x,spectroscopia fotoelectronilor generati cu radiatie x,masuratori curent-tensiune si capacitate-tensiune, FTIR.
6. estimare numeric a gradientilor de temperatura in tintele ablate laser.
7.reducerea emisiei de picaturi in timpul depunerii laser.
8.Proiectarea, constructia si utilizarea camerelor de vid inalt si ultra inalt.
9.depunere laser asistata UV afilmelor subtiri
10. caracterizarea stratului de la interfata format in depunerea filmelor dielectrice pe Si.

Details:
Research experience
1. Generation and characterization of laser plasma
2. Laser self-aligned synthesis of refractory metal silicides
3. Pulsed laser deposition of oxides and nitrates thin films by direct and reactive laser ablation.
4. Thin films photoprocessing
5. Optical, electrical, morphological and structural characterization of thin films by variable angle spectroscopic ellipsometry, grazing and symmetrical x-ray diffraction, x rays reflectivity, x rays photoelectron spectroscopy, current-voltage and capacitance-voltage measurements, Fourier transform infrared spectrometry
6. Numerical estimations of the temperature gradients in laser ablated targets.
7. Reduction of droplets emission during PLD
8. Design, construction and operation of HV- UHV chambers
9. Ultraviolet assisted pulsed laser deposition of thin films
10. Characteristics of the interfacial layer formation during pulsed laser deposition of high-k dielectric films on silicon.