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Single-dopant memory effect in P-doped Si SOI-MOSFETs

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: E. Hamid, J. C. Tarido, S. Miki, T. Mizuno, D. Moraru, and M. Tabe

Editorial: Proceedings of IEEE Silicon Nanoelectronics Workshop, p.45, 2010.


Recent studies of a single electron transport
through a single dopant atom in nanoscale field-effect
transistors (FETs) have revealed that discrete dopants
can work as quantum dots (QDs)1. In nanoscale FETs
with higher channel doping, dopant atoms may work
also as traps for single electrons. This provides the frame model for a new type of device: single dopant memory. We observed single-electron trapping and
detrapping features in the electrical characteristics of phosphorus-doped FETs. The low-temperature source-drain current/front gate voltage (Isd–Vfg) characteristics show hysteresis behavior, which is a signature of charging effect. Based on our Monte Carlo simulations, we propose a simple circuit model describing double-dopant effect.

Cuvinte cheie: single dopant, charging, trap, memory