Inscriere cercetatori

Site nou !

Daca nu va puteti recupera parola (sau aveti alte probleme), scrieti-ne la pagina de contact. Situl vechi se gaseste la adresa


X-ray absorption fine structure of Hg0.79Cd0.21Te ion-implanted semiconductors

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: Emil Indrea , Michel Jaouen , P Chartier

Editorial: Semiconductor Science and Technology, 12 (1), p.42 - 47, 1997.


The local environments around mercury atoms in the narrow-bandgap semiconductor alloys have been deduced from extended x-ray absorption fine-structure (EXAFS) analysis. A nonlinear least-squares fitting was applied in order to determine the coordination number, the bond distances and the Debye – Waller factors for the nearest and the next-nearest neighbours around the Hg atom. While ordering has been found for the first coordination shell which consists of four tetrahedrally coordinated Te atoms at 0.280 nm, the next-neighbour shell (consisting of 12 cations) is split into two peaks at the bond lengths of 0.454 nm for Hg – Cd and 0.459 nm for Hg – Hg. Local structure parameters for Kr- and Xe-ion-implanted crystals are also analysed.

Cuvinte cheie: extended x-ray absorption fine-structure (EXAFS) analysis , Kr- and Xe-ion-implanted , narrow-bandgap semiconductor