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Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, and M. Tabe

Editorial: Procedings of 2007 Silicon Nanoelectronics Workshop, p.5-4, 2007.


Single-electron transfer devices, such as single-electron turnstile or single-electron pump, are a promising candidate for future memory and logic circuits. Si-based single-electron devices (SEDs) provide several advantages over the metal-based ones, like better stability, conventional fabrication techniques, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Fabricating arrays of multiple-tunnel-junctions (MTJs) in Si with homogeneous parameters in the nanoscale regime is nevertheless still a challenge. Whether they are fabricated by thickness modulation of an ultrathin Si layer or by dopant-induced potential modulation, such structures comprise parameter fluctuations. Our purpose is to show, both numerically and experimentally, that random MTJ arrays promote ordered quantized-electron transfer due to the formation of a ratchet-like free energy mechanism as a result of parameter variations.

Cuvinte cheie: dopant-induced multiple-tunnel junctions, Coulomb blockade effect, single-electron transfer