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Observation of single-electron pump operation with one ac gate bias in phosphorus-doped Si wires

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda and M. Tabe

Editorial: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, p.820-821, 2006.


Coulomb blockade (CB) devices with multiple tunnel junctions (MTJs) have attracted much interest in the last decade from the viewpoint of low-power consumption and functionality. Our purpose was to investigate the possibility of realizing single-electron pumps in random MTJ systems in which electrons could be transferred one-by-one between source and drain even against the applied potential. We observed for the first time the transfer of one electron per period of one gate pulse applied to a Si wire with islands formed by potential modulation due to doping. We emphasize that our device works as a single-electron pump with single ac gate bias, while typical single-electron pump circuits require at least two ac gate biases with a well-defined phase shift. This single-electron pump operation in devices comprising naturally formed islands using only one ac gate bias would greatly simplify circuit designs.

Cuvinte cheie: single-electron pump, dopant-induced multiple-tunnel junctions, silicon