Scopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
Autori: D. Moraru, K. Yokoi, M. Ligowski, and M. Tabe
Editorial: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, p.1078-1079, 2008.
We approach the issue of single-electron transfer operation in silicon-based devices from a different angle: utilizing dopant-induced QD arrays. We have recently demonstrated that phosphorus-doped-nanowire SOI-FETs exhibit single-electron transfer features (i.e., ef plateaus in the ISD-VSD curves measured under ac-gate operation). This finding is supported by simulations which indicate that inhomogeneous QD arrays (such as introduced by randomly-distributed ionized dopants) promote single-electron transfer operation.6 The success rate of single-electron transfer obtained from statistical simulations depends both on the number of dots in the system and on the parameter dispersion. It becomes necessary now to find methods of adjusting the QD structure in doped nanowires to meet the requirements for single-electron transfer. In this work, we show how the top and back gates can be used to favorably modify the dopant-induced QD landscape.
Cuvinte cheie: single-electron transfer, dopant-induced quantum dots