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Breakthrough of advanced nano-silicon devices

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: M. Tabe, D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, and T. Mizuno

Editorial: Indonesian Nanoletter, 3, p.17-21, 2010.


Enhanced trend toward scaled-down Si metal-oxide-semiconductor field-effect transistors (MOSFETs) causes remarkable influence of individual dopants on device characteristics. This is regarded as a serious issue in further development of MOSFETs. On the contrary, however, the author and his colleagues have recently proposed a new concept of single dopant electronics, which aims at using potentials of single dopant atoms in Si. This kind of devices may lead us to extremely small devices with a channel size of ~1 nm as an extreme and a variety of functions like photon detection and single-electron transfer. In this paper, recent work on individual dopants by the author’s group, as well as by other groups will be presented.

Cuvinte cheie: silicon, nanoscale, dopants