Autori: *E. Hamid, D. Moraru, J. C. Tarido, S. Miki, T. Mizuno and M. Tabe

Editorial: Applied Physics Letters, 97 (26), p.262101, 2010.

Rezumat:

We describe single-electron transfer between two donors in thin silicon-on-insulator field-effect transistors with phosphorus-doped channel. At low temperatures, single-electron tunneling through one donor can be identified in source-drain current/gate voltage measurements as a single current peak. On this peak, we observed hysteresis most likely as a signature of single-electron transfer with another donor. The origin of single-electron transfer is related to different intensities of coupling between each donor and the interface, as evidenced from simulations. It was found that donor-interface coupling is essential for the energetic transfer of a single electron location within the two-donor system.

Cuvinte cheie: double-donor system, single-electron transfer, interface

URL: http://apl.aip.org/resource/1/applab/v97/i26/p262101_s1