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Single-photon detection by Si single-electron FETs

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: *M. Tabe, A. Udhiarto, D. Moraru and T. Mizuno

Editorial: Physica Status Solidi A (on the cover), 208 (3), p.646-651, 2011.


We have demonstrated that Si single-electron SOI-MOSFETs with multidots channel have attractive new functions such as single-photon detection. Multidots formed by nanoscale selective oxidation of thin SOI layer have been used for photon detection. Most recently, we have investigated photon detection capabilities of FETs having phosphorus (P)-doped channel. In such P-doped FETs, each P donor works as a quantum dot for electrons and single-electron transport is achieved by tunnelling through donor potentials. Using such P-doped FETs, single-photon detection has been demonstrated. Furthermore, in order to directly observe the spatial landscape of even a single-dopant potential, we have developed low-temperature-Kelvin probe force microscopy (LT-KFM) and succeeded in detecting a single-dopant potential in the channel region. In this paper, we present results of photon-induced random telegraph signals in crystalline-dot-type and donor-dot-type multidot single-electron SOI-MOSFETs, and direct observation of a single-dopant potential by LT-KFM.

Cuvinte cheie: single photon, single dopant, single-electron FET