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High-pressure effects on single crystals of electron-doped Pr2-xCexCuO4

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: C. R. Rotundu, V. V. Struzhkin, M. S. Somayazulu, S. Sinogeikin, Russell J. Hemley, and R. L. Greene

Editorial: APS, APS, Physical Review B, 87, p.024506, 2013.


We present high-pressure diamond-anvil cell synchrotron x-ray, resistivity, and ac-susceptibility measurements
on the electron-doped cuprate Pr2-xCexCuO4 to much higher pressures than previously reported. At 2.72 GPa
between 88 and 98% of the superconducting T phase of the optimally doped Pr1.85Ce0.15CuO4 transforms into
the insulating phase T . With application of pressure, the T phase becomes more insulating, so we present here an example of electron doping in the T structure. The results have implications for the search for ambipolar high-Tc cuprate superconductors. The Tc of the remaining 2–12% T phase is suppressed continuously from 22 to 18.5 K at about 14 GPa. Remarkably, the Tc of the overdoped Pr1.83Ce0.17CuO4 remains practically unchanged even at 32 GPa.

Cuvinte cheie: high pressure resistivity, AC-susceptibility, X-ray of electron doped HTSc ucprate PCCO