Scopul nostru este sprijinirea şi promovarea cercetării ştiinţifice şi facilitarea comunicării între cercetătorii români din întreaga lume.
Autori: M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta
Editorial: ECS Transactions, 58, p.89-95, 2013.
Recently, the role of dopants in Si devices has been changing after a long and successful history in Si integrated circuit technology. The change can be seen as a transition from “bulk-type” dopants, with averaged potential, to “atom-type” dopants, with individual atomistic potential. Furthermore, dopant energy levels are modified by the effect of dielectric misfit with surrounding Si and the outside structure, which leads to the transformation of conventional dopants into artificial deep dopants. This effect may be significantly important for the purpose of the extension of operation temperature range of dopant-atom devices from low temperatures (<50 K) to room temperature.
Cuvinte cheie: dopant-atom, tunneling, SOI-MOSFET