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Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy

Domenii publicaţii > Fizica + Tipuri publicaţii > Articol în revistã ştiinţificã

Autori: R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe

Editorial: Thin Solid Films, 557, p.249-253, 2014.


Nanoscale pn junctions have been investigated by Kelvin probe force microscopy and several particular features were found. Within the depletion region, a localized noise area is observed, induced by temporal fluctuations of dopant states. Electronic potential landscape is significantly affected by dopants with ground-state energies deeper than in bulk. Finally, the effects of light illumination were studied and it was found that the depletion region shifts its position as a function of light intensity. This is ascribed to charge redistribution within the pn junction as a result of photovoltaic effect and due to the impact of deepened-level dopants.

Cuvinte cheie: KPFM, potential profile, photovoltaic effect, nanoscale pn junction