Mihail Florin Lazarescu

National Institute for Materials Physics, Bucharest, .

E-mail: trimite un mesaj.

Pagina web a instituţiei: http://www.infim.ro

Nascut(a) in: 1949

Interese: compusi-semiconductori, XPS,SHG, XRD,

Details:
- Synthesis and single crystal growth of binary and ternary semiconducting intermetallic compounds (III-V, II-VI), oxidic compounds (microwaves-YIG) and alloys (Heussler, hydrogen storage etc.)
- Growth of single crystalline GaAs of high quality for laser optical components
- Materials for Optoelectronics and Solar energy conversion applications
- The study of native oxides structure on Si and III-V semiconductor compounds surfaces by XPS method
- Synthesis under high pressure of highly homogeneous bulk crystals (semiconductor compounds, intermetallic compounds, alloys) containing volatile components.
- The obtaining and characterization of semiconductor sensitive structures/devices based on GaAs
- The use of some structural (XRD, XPS/ESCA) and optical (SHG, RDS) methods to perform accurate physico-chemical analysis on surfaces and interfaces
- The experimentation of some so-called non-conventional techniques (EC-ALE, M-PAD) for the thin layer deposition on singlecrystalline substrates
- Structures based on semiconductor surfaces pasivated by thiols
- In situ preparation and characterization of some structures for X-ray radiation and gases detection.

Publicații selectate:

* V.Lazarescu, R.Scurtu, M.F.Lazarescu, A.M.Toader, E.Volanschi E.Santos, H.Jones, G.Goetz, P.Bauerle , Potential-induced conformational changes in -CN-terthiophene thiolate film on GaAs(110), Langmuir, 2009.

* R. Alexandrescu, M. Scarisoreanu, I. Morjan, R. Birjega, C. Fleaca, C. Luculescu, I. Soare, O. Cretu, C.C. Negrila, M. Lazarescu, V. Ciupina, Preparation and characterization of nitrogen-doped TiO2 nanoparticles by the laser pyrolysis of N2O-containing gas mixtures, Applied Surface Science, 255, 2009.

* C.Constantinescu, A.Emandi, C.Vasiliu, C.Negrila, C.Logofatu,, Thin films of Cu(II)-o,o0-dihydroxy azobenzene nanoparticle-embedded polyacrylic acid (PAA) for nonlinear optical applications developed by matrix assisted pulsed laser evaporation (MAPLE, Applied Surface Science, 255, 2009.

* M.F. Lãzãrescu, A.Ş. Manea, C. Logofãtu, C.C. Negrilã , Sunthesis and crystallization of Some Advanced Materials – Semiconductors and Alloys, Edit. ELECTRA, 2009.

* M.F.Lazarescu, A.S.Manea, V.Lazarescu, Singlecrystalline Semiconductor Materials, Edit. ICPE, 2000.

* R.Scurtu , N. Ionescu, M. Lãzãrescu,V. Lãzãrescu, Surface States- and Field-Effects at p- and n-dopped GaAs(111)A / solution interface, Phys.Chem. Chem.Phys., 11, 2009.

* R.V.Ghita, V.Lazarescu, C.Logofatu, C.C.Negrila, M.F.Lazarescu, , Electrical Characterization of thiols self-assembled layers on GaP structures, Mater.Sci.Semicond.Processing - accepted, ref. MSSP-D-08-00021, in print, in print, 2009.

* C.C.Negrila ,C..Cotarlan, F.Ungureanu, C.Logofatu, R.V.Ghita, M.F.Lazarescu , ARPXPS analysis of Silicon oxide films, J.Optoelectronics and Adv..Materials, 10(6), 2008.

* C.C.Negrila, C.Logofatu, R.V.Ghita, C.Cotarlan, F.Ungureanu, A.S.Manea, M.F.Lazarescu , Angle-resolved XPS structural investigation of GaAs surfaces, J. Crystal Growth, 310, 2008.

* F.Ungureanu, R.Medianu, R.V.Ghita, C.C,Negrila, P.Ghita, A.S.Manea, M.F.Lazarescu, Properties of TiO2 thin films prepared by different techniques, J.Optoelectronics and Adv..Materials, 9(5), 2007.

* R.V.Ghita, C.Logofatu, C.Negrila, C.Cotirlan, P.Ghita, A.S.Manea, M.F.Lazarescu, Spectral response of Au-Ti Scottky barrier on semi-insulating GaAs, Phys.Status Solidi A, 204(4), 2007.

* R.V.Ghita, C.Logofatu, C.Negrila, A.S.Manea, M.Cernea, V.Ciupina, M.F.Lazarescu, XPS study of Ti/oxidized GaAs interface , J.Optoelectronics and Adv..Materials, 8(1), 2006.

* P.Palade, S.Sartori, A.Maddalena, G.Principi, S La Russo, M.Lazarescu, G.Schinteie, V.Kuncser. G.Filoti , Hydrogen storage in Mg-Ni-Fe compounds prepared by melt spinning and ball milling, J.Alloys and Compounds, 415, 2006.

* R.V.Ghita, C.Logofatu, C.Negrila, A.S.Manea, M.Cernea, M.F.Lazarescu, Studies of ohmic contact and Schottky barriers on Au-Ge/GaAs and Au-Ti/GaAs, J.Optoelectronics and Adv..Materials, 7(6), 2005.

* V.Lazarescu, R.Scurtu, M.F. Lazarescu, E.Santos, H.Jones, W. Schmickler, , Field Effects and Surface States in SHG at n-GaAs (hkl) Electrodes, Electrochimica Acta., 50, 2005.

* V.Lazarescu, M.F.Lazarescu, E.Santos, W.Schmickler, Second Harmonic Generation and impedance spectroscopy at n-GaAs (100) electrodes, Electrochimica Acta, 49(24), 2004.

* V.Lazarescu, M.F.Lazarescu, H.Jones, W.Schmickler, Second Harmonic Generation at the GaAs (111)-B/solution interfaces, J.Electroanalitical Chemistry, 567 (2), 2004.

* R.V.Ghita, C. Negrila, A.S.Manea, C. Logofãtu, M.Cernea, M. F. Lazarescu, "X-Ray Photoelectron Spectroscopy study on n-type GaAs, ", J. of Optoelectronics and Adv. Mat, 5(4)., 2003.

* R.V.Ghita, C.Logofatu, C.Negrila, M.F.Lazarescu, A.S.Manea, V.Ciupina, Bar-Configuration in Hall Measurements with GaAs, Journal of Optoelectronics and Advanced Materials, 5(1), 2003.

* R.V.Ghita, M.Nedelcu, M.F.Lazarescu, Chemical Deposited Pd on GaAs, Cryst Res.Technol., 37(4), 2002.

* . M.Nedelcu, M.Sima, A.S.Manea, M.F.Lazarescu, R.V.Ghita, F.Craciunoiu, T.Visan, Bi2-xSbxTe3 thick thermoelectric films obtained by electrodeposition from hydrochloric acid solutions, Journal of Optoelectronics and Advanced Materials, 4 (1), 2002.

* M.F.Lazarescu, D.Pantelica, A.S.Manea, R.V.Ghita, F.Negoita , Investigation of semi-insulating oxygen doped GaAs, J.Cryst.Growth., 240, 2002.

* Nedelcu M.,Sima M., Stoica T., Manea AS., Lazarescu M.F., Visan T, PbSe1-xTex thick thermoelectric films obtained by electrochemical deposition from aqueous solutions, Journal of Optoelectronics and Advanced Materials, () p., 3(4), 2001.

* D.Gaburici, M.F.Lazarescu, A.S.Manea, V.Sandu, Structural analysis on polycrystalline CuGa1-xInxTe2 bulk quaternary compounds synthesized by a rapid cooling technique, Cryst.Res.Technol., 35 (3), 2000.

* C.Dan, V.Topa, M.F.Lazarescu, On the lead determination in alkali halides by spectroscopic method, Cryst.Res.Technol., 34, 1999.

* A.S.Manea, M.F.Lazarescu, I.Mateescu, G.Pop, C.Ghita, Influence of the melt growth configuration on the structural properties of langasite crystals, Ann.Sci.Mat., 22, 1997.

* A.Popa, M.F.Lazarescu, R.Dabu, A.Stratan, A model of the metallic surface-emitting Second Harmonic Generator, ”, IEEE Journal of Quantum Electronics, 33(9), 1997.

* C.E.A.Grigorescu, S.A.Manea, M.F.Lazarescu, T.Botila, I.Munteanu, T.Necsoiu , Influence of some n-type InSb properties on the main parameters of infrared photoconductive detectors, Materials Science and Engineering, B 44, 1997.

* A.S.Manea, I.I.Munteanu, C.E.A.Grigorescu, M.F.Logofatu, M.F.Lazarescu, On the uniform composition of InxGa1-xSb (x= 0,02) bulk crystals for special optoelectronic devices, Optical Eng., 35(5), 1996.

* M.FLazarescu, A.S.Manea, E.Elena, The influence of the melt cooling rate on the properties of YIG single crystals grown by the flux method from sintered polycrystalline material, Cryst.Res.Technol., 29(6), 1994.

* M.F.Lazarescu, A.S.Manea, Highly homogeneous polycrystalline HgTe synthesis under pressure, Cryst.Res.Technol., 29(1), 1994.

* M.F.Lazarescu, E.Elena, A.S.Manea, C.Timus, M.L.Pascu, Optical quality GaAs grown from quartz crucible, Cryst.Res.Technol., 28(4), 1993.

* V.Lazarescu, M.F.Lazarescu, Highly pure Gallium obtained by a simple technique, Rev.Roum.Chimie, 23 (6), 1978.