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Calculation of the Depletion Region Width and Barrier Capacitance of Diffused Semiconductor Junctions with Application to Reach-Through Breakdown Voltage of Semiconductor Devices with Diffused Base

Domenii publicaţii > Stiinte ingineresti + Tipuri publicaţii > Articol în volumul unei conferinţe

Autori: Miron J. Cristea

Editorial: IEEE, Proceedings of International Semiconductor Conference CAS 2007 (an IEEE event), Sinaia, Romania, 2007.


For more than 50 years, nobody could infer an analytical formula for the depletion region width (barrier capacitance) of diffused (Gaussian) semiconductor junctions using only the basic depletion approximation. Until now. Why? Because the integration of the Poisson equation cannot be done for the Gaussian function of the doping profile of diffused junctions, unless using the erf function, which is not analytical (elementary function), but tabulated (non-elementary), or using simple exponential approximations (or a sum of simple exponentials), or by numerical integration (computer approach).

How was it done in this work? By using a new fundamental physics formula, applied to semiconductor junctions

This formula can be integrated in the case of Gaussian doping distribution. The results are presented in the conference paper.

Cuvinte cheie: jonctiuni semiconductoare difuzate, latimea zonei golite, capacitatea de bariera // diffused semiconductor junctions, depletion region width, barrier capacitance