Current-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the

For more than 50 years, nobody could infer an analytical formula for the depletion region width (barrier capacitance) of diffused (Gaussian) semiconductor junctions using only the basic depletion approximation. Until now. Why? Because the integration of the Poisson equation cannot be done for the Gaussian function of the doping profile of diffused junctions, unless using the erf function, which is not analytical (elementary function), but tabulated