Coulomb blockade (CB) devices with multiple tunnel junctions (MTJs) have attracted much interest in the last decade from the viewpoint of low-power consumption and functionality. Our purpose was to investigate the possibility of realizing single-electron pumps in random MTJ systems in which electrons could be transferred one-by-one between source and drain even against the applied potential. We observed for the first time the transfer of one electron

Study on coherent nature of electrons in tunneling through SiO2 is important in developing novel Si devices such as resonant tunneling devices and optical devices. In this work, we attack this problem again by adopting new structures based on the wafer bonding technique, i.e., Si(111)/SiO2/Si(111) structures, in which the two facing Si layers are intentionally misoriented with various twist angles. It is expected that, if the transverse momentum

We have demonstrated numerically and experimentally that quantized electron transfer can be achieved in single-gated random multiple tunnel junctions. Extensive Monte Carlo simulations based on Coulomb blockade orthodox theory show that nonhomogeneous distributions of capacitances energetically favor one-by-one electron shuttling between the electrodes during each cycle of a gate voltage. This numerical prediction is supported by our experimental

The dependence of Fowler–Nordheim current oscillations (FNCOs) on the twist angle between the facing Si layers in Si(111)/SiO2/Si(111) bonded structures is investigated. The observed systematic variation in oscillation amplitude with twist angle can be ascribed to transverse momentum conservation upon Fowler–Nordheim tunneling through thin SiO2. A calculation result, taking into account the twist-induced decrease in potential discontinuity and