We have studied single-electron turnstile operation in common-gated one-dimensional arrays of four tunnel junctions (three dots) having inhomogeneous junction capacitances. Analytical calculations show that the source-drain voltage range with a current plateau due to single-electron turnstile operation is increased when the outer two tunnel capacitances are adjusted to be smaller than the inner ones. In fact, we have demonstrated in phosphorous-doped

Recent studies of a single electron transport through a single dopant atom in nanoscale field-effect transistors (FETs) have revealed that discrete dopants can work as quantum dots (QDs)1. In nanoscale FETs with higher channel doping, dopant atoms may work also as traps for single electrons. This provides the frame model for a new type of device: single dopant memory. We observed single-electron trapping and detrapping features in the electrical

As device dimensions are continuously scaled down, the discreteness of dopant distribution has a significant effect on conventional device operation and controllability. However, a new device concept emerged: a single dopant transistor. Recent reports have demonstrated the characteristics of single-electron transport through a single or a few isolated dopant(s) in an FET channel. It is, however, difficult to control the number and position of single

Enhanced trend toward scaled-down Si metal-oxide-semiconductor field-effect transistors (MOSFETs) causes remarkable influence of individual dopants on device characteristics. This is regarded as a serious issue in further development of MOSFETs. On the contrary, however, the author and his colleagues have recently proposed a new concept of single dopant electronics, which aims at using potentials of single dopant atoms in Si. This kind of devices

In this work, we report results on transport through discrete dopants showing the controllability of dopant-induced quantum dot (QD) array structure by channel geometry. Furthermore, using a low-temperature Kelvin probe force microscope (LT-KFM) technique we observed single-electron charging events directly by monitoring the potential changes under Vsd application.

We show that single-electron transport through a single dopant can be achieved even in random background of many-dopants without any precise placement of individual dopants. First, we observe potential maps of phosphorus-doped channel by low-temperature Kelvin probe force microscope and demonstrate potential change due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage

Single charge manipulation for useful electronic functionalities has become an exciting and fast-paced direction of research in recent years. In structures with dimensions below about 100 nm, the physics governing the device operation turn out to be strikingly different than in the case of larger devices. The presence of even a single charge may completely suppress current flow due to the basic electron-electron repulsion (so called Coulomb blockade

Single electron devices (SEDs) are candidates to become a keystone of future electronics. They are very attractive due to low power consumption, small size or high operating speed. It is even possible to assure compatibility with present CMOS technology when natural potential fluctuations introduced by dopant atoms are used to create quantum dots (QD). However, the main problem of this approach is due to the randomness of dopant distribution which

Single-electron devices are attractive because of their ultimate capabilities such as single-electron transfer, single-electron memory, single-photon detection and high sensitivity to elemental amount of charge. We studied single-electron transport in doped nanoscale-channel field-effect transistors in which the channel potential is modulated by ionized dopants. These devices work as arrays of quantum dots with dimensions below present lithography

We demonstrate tunable single-electron turnstile operation in doped-nanowire silicon-on-insulator field-effect transistors. In these structures, electron transport occurs through dopant-induced quantum dots. We show that the substrate silicon can be used as a back gate to modulate the inter-dot coupling, which dictates the overlap between Coulomb domains in the charge stability diagrams of these devices. Since this overlap is a necessary requirement