We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices.

Single-electron transfer in single-gated one-dimensional quantum dot arrays is investigated statistically from the viewpoint of robustness against parameter fluctuations. We have found numerically that inhomogeneous quantum dot arrays formed in doped nanowires exhibit single-electron transfer over a wide range of parameters. This confirms our frequent experimental observation of single-electron transfer in doped-nanowire field-effect transistors.

Detection of individual dopants in the thin silicon layer using Kelvin Probe Force Microscopy is presented. The analysis of the surface potential images taken at low temperatures (13 K) on n-type and p-type samples reveals local potential fluctuations that can be attributed to single phosphorus and boron atoms, respectively. Results are confirmed by simulation of surface potential induced by dopants and by the back gate voltage dependence of the

Single Electron Devices (SEDs) are very promising for fabrication of future Ultra-Large Scale Integrated (ULSI) circuits, sensors, memories or metrological tools due to their ultimate properties of manipulating elementary charge. The possibility of significant reduction of parameters such as device size or power consumption makes SEDs being widely investigated at present. One of the approaches to achieve single electron transfer is by creating quantum

We approach the issue of single-electron transfer operation in silicon-based devices from a different angle: utilizing dopant-induced QD arrays. We have recently demonstrated that phosphorus-doped-nanowire SOI-FETs exhibit single-electron transfer features (i.e., ef plateaus in the ISD-VSD curves measured under ac-gate operation). This finding is supported by simulations which indicate that inhomogeneous QD arrays (such as introduced by randomly-distributed

As field-effect transistor (FET) dimensions are scaled down, discreteness of dopant distribution in the device channel strongly affects its electrical behavior. Ionized dopants introduce potential fluctuations in the Si channel, working basically as quantum dots (QDs) with only two states available: depleted or filled by a single elementary charge. Hence, few-dopant systems are attractive for single-charge transfer controlled in time and space. In

Recently, we are entering a new stage of electronics, in which time-controlled transport of individual electrons can be achieved by using nanodevices, so-called single-electron tunneling devices. Also, it is recognized that single-electron transport is highly sensitive to ultimately small environmental charges such as a photo-generated electron and a doped ion, leading to a new paradigm in electronic devices working with a few elemental particles,

Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on Si single-electron nano-devices will be presented. We have demonstrated single-electron transfer in random-tunnel-junctions by a cycle of ac gate bias, detection of photons and detection of individual acceptor ions by Si single-hole transistor.

Single-electron transfer devices, such as single-electron turnstile or single-electron pump, are a promising candidate for future memory and logic circuits. Si-based single-electron devices (SEDs) provide several advantages over the metal-based ones, like better stability, conventional fabrication techniques, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Fabricating arrays of multiple-tunnel-junctions (MTJs) in