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E. Ferraro, H.-P. Breuer, A. Napoli, M.A. Jivulescu, A. Messina Non-Markovian dynamics of a single electron spin coupled to a nuclear spin bath. Physical Review B, , p.064309-1-8, 2008.

E. Ferraro, A. Napoli, M. A. Jivulescu, A. Messina W- like states of N uncoupled spins 1/2. European Journal of Physics-Special Topics,, p.157-164, 2008.

N. Þigau, C. Gheorghies, G. I. Rusu, S. Condurache-Bota The influence of post-deposition treatment on some physical properties of Sb2S3 thin films. Journal of Non-Crystalline Solids, p.987-992, 2005.

M. Zamfirescu, R. Dabu, M. Dumitru, G. Sajin, F. Craciunoiu Femtosecond laser fabrication of metamaterials for high frequency microwave devices. Journal of Laser Micro/NanoEngineering, p.5, 2008.

V. Agarwal, J. A. del Río, G. Malpuech, M. Zamfirescu, A. Kavokin, D. Coquillat, D. Scalbert, M. Vladimirova, and B. Gil Photon Bloch oscillations in porous silicon optical superlattices. Phys. Rev. Lett., p.97401, 2004.

M. Zamfirescu, A. Kavokin, B. Gil, G.Malpuech, and M. Kaliteevski ZnO as a material mostly adapted for the realization of room-temperature polariton lasers. Phys. Rev. B, p.161205, 2002.

R.Scurtu , N. Ionescu, M. Lãzãrescu,V. Lãzãrescu Surface States- and Field-Effects at p- and n-dopped GaAs(111)A / solution interface. Phys.Chem. Chem.Phys., p.1765–, 2009.

R.V.Ghita, V.Lazarescu, C.Logofatu, C.C.Negrila, M.F.Lazarescu, Electrical Characterization of thiols self-assembled layers on GaP structures. Mater.Sci.Semicond.Processing - accepted, ref. MSSP-D-08-00021, in print, 2009.

C.C.Negrila ,C..Cotarlan, F.Ungureanu, C.Logofatu, R.V.Ghita, M.F.Lazarescu ARPXPS analysis of Silicon oxide films. J.Optoelectronics and Adv..Materials , p.1379-1383, 2008.

C.C.Negrila, C.Logofatu, R.V.Ghita, C.Cotarlan, F.Ungureanu, A.S.Manea, M.F.Lazarescu Angle-resolved XPS structural investigation of GaAs surfaces. J. Crystal Growth, p.1576-1582, 2008.

F.Ungureanu, R.Medianu, R.V.Ghita, C.C,Negrila, P.Ghita, A.S.Manea, M.F.Lazarescu Properties of TiO2 thin films prepared by different techniques. J.Optoelectronics and Adv..Materials, p.1457-1461, 2007.

R.V.Ghita, C.Logofatu, C.Negrila, C.Cotirlan, P.Ghita, A.S.Manea, M.F.Lazarescu Spectral response of Au-Ti Scottky barrier on semi-insulating GaAs. Phys.Status Solidi A, p.1025-1029, 2007.

R.V.Ghita, C.Logofatu, C.Negrila, A.S.Manea, M.Cernea, V.Ciupina, M.F.Lazarescu XPS study of Ti/oxidized GaAs interface. J.Optoelectronics and Adv..Materials, p.31-36 , 2006.

P.Palade, S.Sartori, A.Maddalena, G.Principi, S La Russo, M.Lazarescu, G.Schinteie, V.Kuncser. G.Filoti Hydrogen storage in Mg-Ni-Fe compounds prepared by melt spinning and ball milling. J.Alloys and Compounds, p.170–, 2006.

R.V.Ghita, C.Logofatu, C.Negrila, A.S.Manea, M.Cernea, M.F.Lazarescu Studies of ohmic contact and Schottky barriers on Au-Ge/GaAs and Au-Ti/GaAs. J.Optoelectronics and Adv..Materials, p.3033-3037, 2005.

V.Lazarescu, R.Scurtu, M.F. Lazarescu, E.Santos, H.Jones, W. Schmickler, Field Effects and Surface States in SHG at n-GaAs (hkl) Electrodes. Electrochimica Acta., p.4830-4836, 2005.

V.Lazarescu, M.F.Lazarescu, E.Santos, W.Schmickler Second Harmonic Generation and impedance spectroscopy at n-GaAs (100) electrodes. Electrochimica Acta , p.4231-4238, 2004.

V.Lazarescu, M.F.Lazarescu, H.Jones, W.Schmickler Second Harmonic Generation at the GaAs (111)-B/solution interfaces. J.Electroanalitical Chemistry , p.257-261, 2004.

R.V.Ghita, C. Negrila, A.S.Manea, C. Logofãtu, M.Cernea, M. F. Lazarescu „X-Ray Photoelectron Spectroscopy study on n-type GaAs. ", J. of Optoelectronics and Adv. Mat, p. 859-863, 2003.

R.V.Ghita, C.Logofatu, C.Negrila, M.F.Lazarescu, A.S.Manea, V.Ciupina Bar-Configuration in Hall Measurements with GaAs. Journal of Optoelectronics and Advanced Materials, p.359-363, 2003.

R.V.Ghita, M.Nedelcu, M.F.Lazarescu Chemical Deposited Pd on GaAs. Cryst Res.Technol. , p.323-328 , 2002.

. M.Nedelcu, M.Sima, A.S.Manea, M.F.Lazarescu, R.V.Ghita, F.Craciunoiu, T.Visan Bi2-xSbxTe3 thick thermoelectric films obtained by electrodeposition from hydrochloric acid solutions. Journal of Optoelectronics and Advanced Materials , p.107-114, 2002.

M.F.Lazarescu, D.Pantelica, A.S.Manea, R.V.Ghita, F.Negoita Investigation of semi-insulating oxygen doped GaAs. J.Cryst.Growth. , p.401-406, 2002.

Nedelcu M.,Sima M., Stoica T., Manea AS., Lazarescu M.F., Visan T PbSe1-xTex thick thermoelectric films obtained by electrochemical deposition from aqueous solutions. Journal of Optoelectronics and Advanced Materials, () p. , p.909-914, 2001.

D.Gaburici, M.F.Lazarescu, A.S.Manea, V.Sandu Structural analysis on polycrystalline CuGa1-xInxTe2 bulk quaternary compounds synthesized by a rapid cooling technique. Cryst.Res.Technol., p.265-270, 2000.

C.Dan, V.Topa, M.F.Lazarescu On the lead determination in alkali halides by spectroscopic method. Cryst.Res.Technol., p.891-895, 1999.

A.S.Manea, M.F.Lazarescu, I.Mateescu, G.Pop, C.Ghita Influence of the melt growth configuration on the structural properties of langasite crystals. Ann.Sci.Mat. , p.735-738, 1997.

A.Popa, M.F.Lazarescu, R.Dabu, A.Stratan A model of the metallic surface-emitting Second Harmonic Generator. ”, IEEE Journal of Quantum Electronics , p.1474-1480, 1997.

C.E.A.Grigorescu, S.A.Manea, M.F.Lazarescu, T.Botila, I.Munteanu, T.Necsoiu Influence of some n-type InSb properties on the main parameters of infrared photoconductive detectors. Materials Science and Engineering , p.270-273, 1997.

A.S.Manea, I.I.Munteanu, C.E.A.Grigorescu, M.F.Logofatu, M.F.Lazarescu On the uniform composition of InxGa1-xSb (x= 0,02) bulk crystals for special optoelectronic devices. Optical Eng., p.1356-1359, 1996.

M.FLazarescu, A.S.Manea, E.Elena The influence of the melt cooling rate on the properties of YIG single crystals grown by the flux method from sintered polycrystalline material. Cryst.Res.Technol. , p.889-894, 1994.

M.F.Lazarescu, A.S.Manea Highly homogeneous polycrystalline HgTe synthesis under pressure. Cryst.Res.Technol. , p.39-43, 1994.

M.F.Lazarescu, E.Elena, A.S.Manea, C.Timus, M.L.Pascu Optical quality GaAs grown from quartz crucible. Cryst.Res.Technol., p.K 19-K23, 1993.

V.Lazarescu, M.F.Lazarescu Highly pure Gallium obtained by a simple technique. Rev.Roum.Chimie, p. 861-864, 1978.

S. D. Anghel, A. Simon and T. Frentiu Spectroscopic investigations on low power atmospheric pressure capacitively coupled helium plasma. Plasma Sourc. Sci. and Technol., p.045016, 2008.

S. D. Anghel, A. Simon, A. I. Radu and I. J. Hidi Spectroscopic Characterisation of a Cross-Flow Plasma Jet. Nucl. Instr. and Methods in Phys. Research Sect. B: Beam Interactions with Materials and Atoms, p.430-433, 2009.

A. Simon, S.D. Anghel, M. Papiu and O. Dinu Diagnostics and Active Species Formation in an Atmospheric pressure Helium Sterilization Plasma Source. Nucl. Instr. and Methods in Phys. Research Sect. B: Beam Interactions with Materials and Atoms, p.438-441, 2009.

A. Simon, S.D. Anghel and J. Pap Optimum working parameters for plasma needle used for bacterial deactivation. Journ. Optoel. Adv. Mater., p. 2077-2081, 2008.

S.D. Anghel and A. Simon Measurement of electrical characteristics of atmospheric pressure non-thermal He plasma. Meas. Sci. Technol., p.2642-2648, 2007.

A.Simon, S.D.Anghel, T.Frentiu and S.Simon Investigation of a medium power rf CCP and its application to high-temperature superconductor analysis vis AES. J.Anal.At.Spectrom , p.957-965 , 2005.

S.D.Anghel, A.Simon and T.Frentiu Characterization of a very low Ar CCP. J.Anal.At.Spectrom, p.966-973, 2005.